These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

主要特性

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 2.1 V (typ.) @ IC = 40 A

• 5 μs minimum short circuit withstand time at TJ=150 °C

• Safe paralleling

• Very fast recovery antiparallel diode

• Low thermal resistance